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- W2946479584 abstract "In this paper, comprehensive study for OFF-state hot carrier degradation of scaled nMOSFETs in DRAM was examined using devices with different effective channel doping concentration (N eff ) and gate oxide thickness (T ox ). Higher N eff , less negative source voltage (V s ), and more negative body voltage (V B ) improved the OFF-state degradation for devices with a thick T ox of 6.0 nm. On the other hand, higher N eff and more negative V B increased the OFF-state degradation for devices with a thin T ox of 2.2 nm. The results for the OFF-state degradation were compared to the ON-state hot carrier degradation to understand the physical mechanism. Our founding indicates that techniques using a lower N eff for nMOSFETs with a thin gate oxide thickness can be a key parameter to improve reliability for scaling of core transistor in DRAM." @default.
- W2946479584 created "2019-05-29" @default.
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- W2946479584 date "2019-03-01" @default.
- W2946479584 modified "2023-09-27" @default.
- W2946479584 title "Comprehensive Study for OFF-State Hot Carrier Degrdation of Scaled nMOSFETs in DRAM" @default.
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- W2946479584 doi "https://doi.org/10.1109/irps.2019.8720444" @default.
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