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- W2947020154 abstract "The research on Si/SiGe heterojunction bipolar transisfors has led the ultra-high-speed transistors tha! are compatible wilh the state-of-the-art silicon inlegraled technology. The SiGe base regions ofthese transistors are grimn selectivety on silicon substrates. Self-aligned slructures are used to reduce the external base resisiance aiid base colleclor parasitic capacitance. The germanium profile in Ihe base is graded to obtain a drift ejfect to reduce the base-transil tiine. Si/SiGe integrated circuils for applications in optical-flber link systems and Si/SiGe microwave pover Iransistors have been produced wilh remarkable speeds. The SiGe semiconduaor material system, HBT slructures and fabricalion, and device performance issues are reviewed in thispaper." @default.
- W2947020154 created "2019-06-07" @default.
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- W2947020154 date "2000-06-30" @default.
- W2947020154 modified "2023-09-23" @default.
- W2947020154 title "Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW)" @default.
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