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- W2947334878 endingPage "1900300" @default.
- W2947334878 startingPage "1900300" @default.
- W2947334878 abstract "Recent advances in device design and process optimizations have enabled the production of CdTe devices on flexible substrates, but the necessary high-temperature processing (>450 °C) to recrystallize grains limits the use of alternative lightweight substrates. Here, a new synthesis method is reported to create a freestanding CdS/CdTe film by combining high-temperature depositions (CdS/CdTe on Si/SiO2) and a simple lift-off process in a water environment at room temperature. Analysis of the results indicate that the delamination is facilitated by the innate lattice mismatch as well as the presence of an unexpected Te-rich layer (≈20 nm), which accumulates on the SiO2 surface. High-resolution electron microscopy and spectroscopy measurements confirm that the CdS/CdTe film is physically liberated from the substrate without leaving any residue, while also preserving their initial structural and compositional properties." @default.
- W2947334878 created "2019-06-07" @default.
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- W2947334878 date "2019-05-27" @default.
- W2947334878 modified "2023-10-17" @default.
- W2947334878 title "Water‐Assisted Liftoff of Polycrystalline CdS/CdTe Thin Films Using Heterogeneous Interfacial Engineering" @default.
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- W2947334878 doi "https://doi.org/10.1002/admi.201900300" @default.
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