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- W2947689323 abstract "Abstract Herein, we report the dual functionality of a single n-type gallium nitride (n-GaN) layer as an electron transporter and transparent conductor, which has applications in reusable organic solar cells. After silicon doping with an optimized electron concentration, thin-film layer of GaN showed exceptional electrical properties including charge carrier mobility of 161 cm2 V−1s−1, electrical conductivity of 1.4ⅹ106 S cm−1, and sheet resistance of 11.1 Ω cm−2. Organic solar cells based on n-GaN exhibited power conversion efficiency comparable to those based on a conventional ITO/ZnO bilayered cathode. Furthermore, the n-GaN substrates exhibited reusability; due to excellent chemical stability of n-GaN, the reconstructed organic solar cells maintained their initial performance after the substrates were recycled. We suggest a new type of reusable n-GaN cathode layer featuring an integrated electron transporting layer and transparent electrode." @default.
- W2947689323 created "2019-06-07" @default.
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- W2947689323 date "2019-09-01" @default.
- W2947689323 modified "2023-09-27" @default.
- W2947689323 title "Reconsideration of the gallium nitride: Dual functionality as an electron transporter and transparent conductor for recyclable polymer solar cell substrate applications" @default.
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- W2947689323 doi "https://doi.org/10.1016/j.solmat.2019.109971" @default.
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