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- W2948544787 abstract "As an ultra-wide bandgap semiconductor, $beta $ -Ga2O3 has attracted great attention for high-power, high-voltage, and optoelectronic applications. However, until now, high-frequency performance of gallium oxide devices has been limited to relatively low current gain cutoff frequencies below 5 GHz. Here, we show that highly localized delta-doping designs can enable high-sheet-charge density to enable devices with short gate lengths that allow high-frequency operation. Field-effect transistors with a gate length of 120 nm on such delta-doped $beta $ -Ga2O3 are reported here with extrinsic unity current gain frequency of 27 GHz. The device has a peak drain current of 260 mA/mm, transconductance (gm) of 44 mS/mm, and three-terminal off-state breakdown voltage of 150 V. These results demonstrate that the potential of $beta $ -Ga2O3 for future RF and millimeter-wave device applications." @default.
- W2948544787 created "2019-06-14" @default.
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- W2948544787 date "2019-07-01" @default.
- W2948544787 modified "2023-10-03" @default.
- W2948544787 title "$beta$ -Ga<sub>2</sub>O<sub>3</sub> Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz" @default.
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- W2948544787 doi "https://doi.org/10.1109/led.2019.2920366" @default.
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