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• W2949114520 abstract "We report an atmospheric-pressure deposition method for preparing well-adhered and compact CuInS2 films. The precursor film is obtained by a solution-coating technique and is subjected to a low-cost and safe one-step reduction−sulfurization treatment. A maximum thickness of 300 nm is achieved per layer, and up to three layers were sulfurized at a time. The obtained films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and visible−near-infrared (vis−NIR) spectrophotometry." @default.
• W2949114520 created "2019-06-27" @default.
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• W2949114520 date "2006-06-01" @default.
• W2949114520 modified "2023-09-27" @default.
• W2949114520 title "CuInS₂ Films for Photovoltaic Applications Deposited by a Low-Cost Method" @default.
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• W2949114520 doi "https://doi.org/10.1021/cm0606631" @default.
• W2949114520 hasPublicationYear "2006" @default.
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