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- W2949284328 abstract "The metallizations which interconnect devices formed on silicon wafers have evolved from a single level of lines of to very narrow lines (<1 μm in width), often more than two levels per chip. Whereas broad lines may be satisfactorily defined by solution or wet etching, narrow lines must be defined by plasma etching to maintain dimensional and profile control. Moreover, simple metallization has become complex, generally consisting of a composite of barrier and antireflecting layers which sandwich the film. In addition, the film itself is probably doped with silicon and copper for solid solubility and electromigration considerations. Consequently, plasma etching of aluminum has become more complicated in the last few years. In this article, the issues confronting the process engineer in attempting to implement reliable metal etching processes are reviewed, emphasizing metallization layers employed for very advanced complementary metal oxide semiconductor integrated circuits." @default.
- W2949284328 created "2019-06-27" @default.
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- W2949284328 date "2010-08-20" @default.
- W2949284328 modified "2023-09-25" @default.
- W2949284328 title "ChemInform Abstract: Plasma Etching of Aluminum Metallizations for Ultralarge Scale Integrated Circuits" @default.
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- W2949284328 doi "https://doi.org/10.1002/chin.199336326" @default.
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