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- W2949484823 abstract "As silicon MOSFETs keep scaling down in size, thecontinued improvement on their logic performance is threated bytheir fundamental physical limits. With silicon approaching theselimits, MOSFETs designed with III-V semiconductors have emerged aspromising candidates to replace them. The low-effective mass ofvarious III-V materials such as InGaAs and InAs allow both fasterand more power efficient performance. One of the key challenges,particularly as devices continue to shrink, is to understand theimportant of non-idealities in FET structures. High-electronmobility transistors, or HEMTs, are III-V Quantum-Well FETs that wecan use to explore many issues of relevance to future III-VMOSFETs. HEMTs are worthwhile transistors in their own right, butare also simpler than III-V MOSFETs and therefore allow a morethorough exploration into the basic transport physics of aquantum-well III-V device. We know from HEMT experimental data thatelectrons travel ballistically at gate lengths of 30- 40 nm,suggesting that a ballistic transport model will only become moreaccurate as channel lengths are scaled down to 10 nm. We would liketo investigate to what extent this is true in III-V MOSFETs, andalso to study the impact of short channel effects and otherparasitics inherent to a III-V design. To accomplish these goals,we have developed a flexible transistor model in MATLAB based on aballistic theory of transport. We will first verify the model withHEMT experimental data coming from devices fabricated at MIT, andthen focus our attention on peculiarities specific to III-VMOSFETs, namely a buried-channel design and the presence of trapsat the oxide-semiconductor interface. We will use the model toextract the trap density as a function of energy, and then makemeasurements independent of interface trap effects to extract the2D sheet carrier concentration and mobility, two figures of meritimportant in characterizing FET devices. The ability to correctlymodel and predict device behavior will help identify the problemsahead that need improvement in the iterations of future devicefabrication." @default.
- W2949484823 created "2019-06-27" @default.
- W2949484823 creator A5085171778 @default.
- W2949484823 date "2013-01-01" @default.
- W2949484823 modified "2023-09-27" @default.
- W2949484823 title "A ballistic transport model for HEMTs and III-VMOSFETs; Ballistic transport model for High-electron mobilitytransistors and III-V metal-oxide-semiconductor field-effecttransistors" @default.
- W2949484823 hasPublicationYear "2013" @default.
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