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• W2949503747 abstract "New approaches for area-selective deposition (ASD) are becoming critical for advanced semiconductor patterning. Atomic layer deposition (ALD) and atomic layer etching (ALE), that is, “inverse ALD”, are considered important for ASD, but to date, direct integration of ALD and ALE for ASD has not been reported. This work demonstrates that self-limiting thermally driven ALE, using WF6 and BCl3, can be directly coupled with self-limiting thermal ALD, using TiCl4 and H2O, in a single isothermal reactor at temperature <200 °C to achieve ASD of TiO2 thin films on common Si/SiO2-patterned surfaces without the use of organic nucleation inhibitors. We show that ALD/ALE “supercycles” (where one supercycle comprises, e.g., 30 ALD cycles followed by 5 ALE cycles) can be reliably repeated to yield more than 12 nm of TiO2 while maintaining a selectivity fraction S > 0.9, nearly a 10× improvement over previous reports of inherent TiO2 ASD. After ALD/ALE (=30/5) 14 supercycles at 170 °C, X-ray photoelectron spectroscopy data show a small Ti 2p signal on Si–H (hydrogen fluoride-cleaned Si), with no Ti 2p signal detected after additional “postetch” ALE cycles. At 150 °C, extended supercycles lead to unwanted particles visible by electron microscopy, which is ascribed to the formation of unreactive mixed silicon/titanium oxide nuclei. The number density of visible particles is consistent with modeled film growth trends. Overall, this work provides new insights into the capabilities for ASD of dielectric materials and a starting point to realize more complex atomic-scale processes using ALD, ALE, and other self-limiting reaction schemes." @default.
• W2949503747 created "2019-06-27" @default.
• W2949503747 creator A5028902206 @default.
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• W2949503747 date "2019-06-12" @default.
• W2949503747 modified "2023-09-30" @default.
• W2949503747 title "Integrated Isothermal Atomic Layer Deposition/Atomic Layer Etching Supercycles for Area-Selective Deposition of TiO₂" @default.
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• W2949503747 doi "https://doi.org/10.1021/acs.chemmater.9b01143" @default.
• W2949503747 hasPublicationYear "2019" @default.
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