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- W2949565044 abstract "Auf Mo-Substrate werden in einem induktionsgeheizten CVD-Reaktor unter Verwendung von SiCl4 und H2 als Gas-Reaktanden bei 1000-1200°C Si-Schichten aufgebracht und nach dem Abkühlen mit Hilfe des TESS-Verfahrens (therm al expansion shear Separation) vom Substrat abgelöst." @default.
- W2949565044 created "2019-06-27" @default.
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- W2949565044 date "1981-09-29" @default.
- W2949565044 modified "2023-10-18" @default.
- W2949565044 title "ChemInform Abstract: INTERACTION OF CVD SILICON WITH MOLYBDENUM SUBSTRATES" @default.
- W2949565044 cites W2099020008 @default.
- W2949565044 doi "https://doi.org/10.1002/chin.198139020" @default.
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