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• W2950186855 abstract "Large-yield and crystalline GaN nanowires have been synthesized on a Si substrate via a simple thermal evaporation process. The majority of the GaN nanowires has bicrystalline structures with a needlelike shape, a triangular prism morphology, and a uniform diameter of ∼100 nm. Field-emission measurements show that the bicrystalline GaN nanowires with sharp tips have a lower turn-on field of ∼7.5 V/μm and are good candidates for low-cost and large-area electron emitters. It is believed that the excellent filed emission property is attributed to the bicrystalline structure defects and sharp tips." @default.
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• W2950186855 date "2005-08-23" @default.
• W2950186855 modified "2023-10-17" @default.
• W2950186855 title "Needlelike Bicrystalline GaN Nanowires with Excellent Field Emission Properties" @default.
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• W2950186855 doi "https://doi.org/10.1021/jp052827r" @default.
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