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• W2950403376 abstract "Gallium nitride $$(hbox {GaN})$$ thin films were grown on the $$hbox {Al}_{2} hbox {O}_{3} left( {0 0 0 1} right) $$ substrate using radio frequency (RF) magnetron sputtering under various RF powers. Many experimental techniques were used for investigating the effects of RF power on the $$hbox {GaN}$$ thin film growth and its physical properties. The X-ray diffraction results confirmed that the $$hbox {GaN}$$ thin film had a polycrystalline structure with planes of $$left( {101} right) $$ and $$left( {202} right) $$ . The structural parameters of the thin film changed with RF powers. It was also found that the optical band gap energy of $$hbox {GaN}$$ thin films varied with changing RF power. From the atomic force microscopy images, almost homogeneous, nanostructured and a low-rough surface of the $$hbox {GaN}$$ thin film can be observed. From scanning electron microscopy analysis, dislocations and agglomerations were observed in some regions of the surface of the $$hbox {GaN}$$ thin film. $$E_{2},({hbox {high}} )$$ optical phonon mode of $$hbox {GaN}$$ was observed, proving the hexagonal structure of the thin film. The residual stress in the $$hbox {GaN}$$ thin films was calculated from Raman measurements. Furthermore, an agreement between the experimental measurements was also examined. The morphological, structural and optical properties of the $$hbox {GaN}$$ thin film could be improved with altering RF power. These films could be used in devices such as light emitting diodes, solar cells and diode applications." @default.
• W2950403376 created "2019-06-27" @default.
• W2950403376 creator A5039805089 @default.
• W2950403376 creator A5083997636 @default.
• W2950403376 date "2019-06-19" @default.
• W2950403376 modified "2023-10-16" @default.
• W2950403376 title "Power-dependent physical properties of $$mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering" @default.
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• W2950403376 doi "https://doi.org/10.1007/s12034-019-1883-4" @default.
• W2950403376 hasPublicationYear "2019" @default.
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