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• W2950470268 abstract "We have studied the low-temperature electrical transport properties of Pb$_x$(SiO$_2$)$_{1-x}$ ($x$ being the Pb volume fraction) nanogranular films with thicknesses of $sim$1000 nm and $x$ spanning the dielectric, transitional, and metallic regions. It is found that the percolation threshold $x_c$ lies between 0.57 and 0.60. For films with $x$$lesssim$0.50, the resistivities $rho$ as functions of temperature $T$ obey $rhoproptoexp(Delta/k_BT)$ relation ($Delta$ being the local superconducting gap and the $k_B$ Boltzmann constant) below the superconducting transition temperature $T_c$ ($sim$7 K) of Pb granules. The value of the gap obtained via this expression is almost identical to that by single electron tunneling spectra measurement. The magnetoresistance is negative below $T_c$ and its absolute value is far larger than that above $T_c$ at a certain field. These observations indicate that single electron hopping (or tunneling), rather than Cooper pair hopping (or tunneling) governs the transport processes below $T_c$. The temperature dependence of resistivities shows reentrant behavior for the 0.50$<$$x$$<$0.57 films. It is found that single electron hopping (or tunneling) also dominates the low-temperature transport process for these films. The reduction of the single electron concentration leads to an enhancement of the resisivity at sufficiently low temperature. For the 0.60$lesssim$$x$$lesssim$0.72 films, the resistivities sharply decrease with decreasing temperature just below $T_c$, and then show dissipation effect with further decreasing temperature. Treating the conducting paths composed of Pb particles as nanowires, we have found that the $R(T)$ data below $T_c$ can be well explained by a model that includes both thermally activated phase slips and quantum phase slips." @default.
• W2950470268 created "2019-06-27" @default.
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• W2950470268 date "2019-03-18" @default.
• W2950470268 modified "2023-09-27" @default.
• W2950470268 title "Hopping conductance and macroscopic quantum tunneling effect in three dimensional Pbx(SiO2)1−x nanogranular films" @default.
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• W2950470268 doi "https://doi.org/10.1103/physrevb.99.094204" @default.
• W2950470268 hasPublicationYear "2019" @default.
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