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- W2950796681 abstract "For enhancement of and in tunnel field-effect transistors (TFETs), it is important to choose novel materials and structures. Here, the authors design a hetero-dielectric buried oxide vertical TFET (HDB VTFET) and its device characteristics has been investigated. This proposed device reveals the tremendous improvement in terms of sub-threshold slope, drain-induced barrier lowering, on-current and suppresses the ambipolar behaviour up to Vgs = −1.0 V by maintaining very low off-current. Hence, the concept of hetero-dielectric buried oxide (BOX) and two metal electrodes having different work-functions are used here to obtain better results in terms of the current driving capability, steep subthreshold slope (SS) and drain-induced barrier lowering (DIBL). This device is a promising candidate for low-power consumption applications." @default.
- W2950796681 created "2019-06-27" @default.
- W2950796681 creator A5010733071 @default.
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- W2950796681 date "2019-10-01" @default.
- W2950796681 modified "2023-10-18" @default.
- W2950796681 title "Performance investigation of electrode work‐function engineered hetero‐dielectric buried oxide vertical TFET" @default.
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- W2950796681 doi "https://doi.org/10.1049/iet-cds.2018.5111" @default.
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