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• W2950911212 abstract "Abstract We report transport measurements of dual gated MoS 2 and WSe 2 devices using atomic layer deposition grown Al 2 O 3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics." @default.
• W2950911212 created "2019-06-27" @default.
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• W2950911212 date "2019-06-19" @default.
• W2950911212 modified "2023-10-17" @default.
• W2950911212 title "Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric" @default.
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• W2950911212 doi "https://doi.org/10.1038/s41598-019-45392-9" @default.
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