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• W2951003441 abstract "Abstract A more compact integrated‐circuit (IC) design is proposed to solve the difficulties experienced when conventional scale‐down methods for IC approache the physical limits of the device. Memory is a key component in ICs, particularly in artificial intelligence (AI) circuits. However, current cutting‐edge designs are not suitable for mass production. Here, a one‐transistor memory with additional electrode(s) directly connected to the channel is proposed as a memory and artificial synaptic device, meaning it can also be used to implement logic gates. The memory proves to be suitable for multilevel memory applications, and had a high current on/off state contrast (above 10 9 ). Its programming time is comparable to dynamic random‐access memory (DRAM). The charge‐trapping memory mechanisms used by the device are proposed to be based on channel–control gate junction charge injection. By using one transistor to replace DRAM, which has one transistor and one capacitor, this new memory has a smaller area and can be fabricated more simply. Thisfacile design can be easily adapted into the foundry as an IC logic gate, memory, or artificial synaptic devices for numerous healthcare applications." @default.
• W2951003441 created "2019-06-27" @default.
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• W2951003441 date "2019-06-12" @default.
• W2951003441 modified "2023-10-15" @default.
• W2951003441 title "One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications" @default.
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• W2951003441 doi "https://doi.org/10.1002/aelm.201900262" @default.
• W2951003441 hasPublicationYear "2019" @default.
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