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- W2951920006 abstract "Abstract The hole-blocking and electron- transporting layer is an important component of third-generation solar cells. This layer is responsible for both hindering the hole recombination from the hole-transport layer and collecting photo-generated electrons; that in turn impact photon-to-current conversion efficiency (ɳ) of devices. Conventionally, WO3 is being used as hole-transport layer owing to high work function and carrier mobility; and excellent thermal stability. In this paper we report ultra-thin WO3 films, prepared by UVO-treatment of WO3-octadecylamine Langmuir-Blodgett multilayers, for use as blocking layers in dye sensitized solar cells (DSSCs). For the first time, it is observed that ɳ of DSSCs with optimized WO3 blocking layer improved significantly (21%) as compared to those based on conventional TiO2 blocking layers. The improvement in ɳ is the result of improved short-circuit current density which is obtained without any accompanying reduction in open-circuit potential and fill factor. This is attributable to the dense and uniform morphology, excellent hole-blocking properties, crystallinity and proper position of Fermi level. The analyses not only reveal that ɳ of DSSCs can be enhanced by employing ultra-thin WO3 LB films as blocking layers but also suggest that the films can possibly be extended further for perosvskite and polymer solar cells." @default.
- W2951920006 created "2019-06-27" @default.
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- W2951920006 date "2019-09-01" @default.
- W2951920006 modified "2023-10-17" @default.
- W2951920006 title "Low temperature processable ultra-thin WO3 Langmuir-Blodgett film as excellent hole blocking layer for enhanced performance in dye sensitized solar cell" @default.
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- W2951920006 doi "https://doi.org/10.1016/j.electacta.2019.06.047" @default.
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