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• W2951941806 abstract "One of the main limiting factors in the carrier mobility in semiconductor nanowires is the presence of deep trap levels. While deep-level transient spectroscopy (DLTS) has proved to be a powerful tool in analysing traps in bulk semiconductors, this technique is ineffective for the characterisation of nanowires due to their very small capacitance. Here we introduce a new technique for measuring the spectrum of deep traps in nanowires. In current-mode DLTS (I-DLTS) the temperature-dependence of the transient current through a nanowire field-effect transistor in response to an applied gate voltage pulse is measured. We demonstrate the applicability of I-DLTS to determine the activation energy and capture cross-sections of several deep defect states in zinc oxide nanowires. In addition to characterising deep defect states, we show that I-DLTS can be used to measure the surface barrier height in semiconductor nanowires." @default.
• W2951941806 created "2019-06-27" @default.
• W2951941806 creator A5014450167 @default.
• W2951941806 creator A5015221241 @default.
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• W2951941806 date "2014-05-29" @default.
• W2951941806 modified "2023-09-27" @default.
• W2951941806 title "Current-Mode Deep Level Transient Spectroscopy of a Semiconductor Nanowire Field-Effect Transistor" @default.
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• W2951941806 hasPublicationYear "2014" @default.
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