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- W2951961034 abstract "The formation of a conducting p-type layer extending ∼ 700 Å is observed and attributed to the loss of significant amounts of P during the annealing cycles (800 °C, 1-30 s)." @default.
- W2951961034 created "2019-06-27" @default.
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- W2951961034 date "1987-06-02" @default.
- W2951961034 modified "2023-09-26" @default.
- W2951961034 title "ChemInform Abstract: Type Conversion in Close Contact Rapid Thermal Annealing of Si-Implanted InP." @default.
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- W2951961034 doi "https://doi.org/10.1002/chin.198722322" @default.
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