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• W2952246428 abstract "Abstract Various 2D/3D heterostructures can be created by harnessing the advantages of both the layered two-dimensional semiconductors and bulk materials. A semiconducting gate field-effect transistor (SG-FET) structure based on 2D/3D heterostructures is proposed here. The SG-FET is demonstrated on an AlGaN/GaN high-electron mobility transistor (HEMT) by adopting single-layer MoS 2 as the gate electrode. The MoS 2 semiconducting gate can effectively turn on and turn off the HEMT without sacrificing the subthreshold swing and breakdown voltage. Most importantly, the proposed semiconducting gate can deliver inherent over-voltage protection for field-effect transistors (FETs). Furthermore, the self-adjustable semiconducting gate potential with drain bias can even boost the ON-current while guaranteeing the safe operation of FET. In implementing the semiconducting gate, the layered two-dimensional materials such as the adopted MoS 2 have several important benefits such as the feasibility of high-quality crystals on different gate dielectrics and the good controllability of semiconducting gate depletion threshold voltage by the layer thickness. The demonstrated semiconducting gate as over-voltage protection for HEMT can be extended to other FETs, which can become another advantageous arena for the possible applications of the layered two-dimensional materials." @default.
• W2952246428 created "2019-06-27" @default.
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• W2952246428 date "2019-06-13" @default.
• W2952246428 modified "2023-10-09" @default.
• W2952246428 title "2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current" @default.
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• W2952246428 doi "https://doi.org/10.1038/s41699-019-0106-6" @default.
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