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• W2952258893 abstract "Herein, an Al:InSe thin film is designed and synthesized by the direct current-radio frequency sputtering method. The obtained Al:InSe films possess smooth surface morphology with Al:InSe particles dispersion on sapphire substrates. Via aluminum (Al) doping, two-photon absorption and the doping energy level together induced free-carrier absorption, established on the conduction band. Al:InSe thin film displays a broad-band nonlinear absorptive band arising from 532 nm to 1064 nm, and exhibits effective third-order (βeff) and fifth-order nonlinear absorption coefficients (γeff) and relaxation time (τ) under femtosecond pulsed laser. This study provides a potential method for preparing Al:InSe thin film to investigate their nonlinear optical properties." @default.
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• W2952258893 date "2019-06-14" @default.
• W2952258893 modified "2023-10-17" @default.
• W2952258893 title "Morphological and nonlinear optical properties of Al:InSe thin films" @default.
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• W2952258893 doi "https://doi.org/10.1364/ome.9.002955" @default.
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