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- W2952475649 abstract "In this paper, <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML id=M1><mml:mn>156</mml:mn><mml:mtext> </mml:mtext><mml:mtext>mm</mml:mtext><mml:mo>×</mml:mo><mml:mn>156</mml:mn><mml:mtext> </mml:mtext><mml:mtext>mm</mml:mtext></mml:math> boron-doped Czochralski silicon (Cz-Si) wafers were fabricated into PERC solar cells by using the industrial standard process; then, the as-prepared PERC solar cells were treated by the regeneration process using electrical injection and heating and the effects of different regeneration processes (temperature, time, and injection current) on the anti-light-induced degradation (anti-LID) performance of the PERC solar cells were investigated. The results show that under the condition of 10 A injection current and 30 min processing time, the optimal processing temperature is about 180°C for PERC solar cells to obtain the best anti-LID performance. Under the conditions of a temperature of 180°C, an injection current of 10 A, and a processing time of 0-30 min, the anti-LID performance of the PERC solar cells is enhanced with the increase in the processing time. When the processing time is 20 and 30 min, the efficiency, the short-circuit current, and the open-circuit voltage of the processed PERC solar cells are slightly higher than the initial values before the regeneration and remain stable in the subsequent 12-hour light degradation process at 45°C and 1-sun illumination. At a temperature of 180°C and a processing time of 30 min, the injection current of 6 A is enough to obtain a good regeneration effect, but the optimal injection current is around 10 A." @default.
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- W2952475649 date "2019-06-20" @default.
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- W2952475649 title "Study on the Electrical Injection Regeneration of Industrialized B-Doped Czochralski Silicon PERC Solar Cells" @default.
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- W2952475649 doi "https://doi.org/10.1155/2019/5357370" @default.
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