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• W2952693114 endingPage "045004" @default.
• W2952693114 startingPage "045004" @default.
• W2952693114 abstract "Two-dimensional (2D) semiconductors are currently considered a very promising alternative to Si for channel applications in next-generation field-effect transistors of sub-5 nm designs. However, their huge potential cannot be fully exploited owing to a lack of competitive insulators which are required to effectively separate the channel from the gate, while being scalable down to few nanometers thicknesses. Recently we have made an attempt at addressing this issue by using crystalline CaF2 insulators and demonstrated competitive MoS2 devices with the insulator thickness of only about 2 nm. Here we report a detailed study of the performance, reliability and thermal stability of these devices. We demonstrate that, in contrast to SiO2 and other amorphous oxides, CaF2 has a very low density of insulator defects which are responsible for the hysteresis and long-term drifts of the transistor characteristics. At the same time, CaF2 exhibits smaller leakage currents and higher electric stability compared to hBN. By comparing our MoS2 transistors with CaF2 fabricated using MoS2 films of different quality, we show that the major limitations on the performance and reliability of these devices come from the bare channel rather than from the superior CaF2 insulator. Finally, we perform the first study of degradation mechanisms only observed for tunnel-thin gate insulators in 2D devices. While these degradation mechanisms are similar for hBN and CaF2, they are less pronounced in CaF2. Our results therefore present a solution to a very important roadblock on the way towards fully scalable 2D nanoelectronics with competitive performance and reliability." @default.
• W2952693114 created "2019-06-27" @default.
• W2952693114 creator A5003579890 @default.
• W2952693114 creator A5008733416 @default.
• W2952693114 creator A5012113227 @default.
• W2952693114 creator A5026635084 @default.
• W2952693114 creator A5029004425 @default.
• W2952693114 creator A5047987940 @default.
• W2952693114 creator A5048990991 @default.
• W2952693114 creator A5061817869 @default.
• W2952693114 creator A5062594496 @default.
• W2952693114 creator A5076285441 @default.
• W2952693114 creator A5077464890 @default.
• W2952693114 creator A5085997637 @default.
• W2952693114 date "2019-07-01" @default.
• W2952693114 modified "2023-10-14" @default.
• W2952693114 title "Reliability of scalable MoS₂ FETs with 2 nm crystalline CaF₂ insulators" @default.
• W2952693114 cites W1849445681 @default.
• W2952693114 cites W1971586968 @default.
• W2952693114 cites W1974326957 @default.
• W2952693114 cites W1975628705 @default.
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• W2952693114 cites W2036787352 @default.
• W2952693114 cites W2041311241 @default.
• W2952693114 cites W2048513650 @default.
• W2952693114 cites W2048682471 @default.
• W2952693114 cites W2053081018 @default.
• W2952693114 cites W2056727633 @default.
• W2952693114 cites W2058122340 @default.
• W2952693114 cites W2062264408 @default.
• W2952693114 cites W2068828527 @default.
• W2952693114 cites W2075952841 @default.
• W2952693114 cites W2082158749 @default.
• W2952693114 cites W2112097921 @default.
• W2952693114 cites W2114859176 @default.
• W2952693114 cites W2121990892 @default.
• W2952693114 cites W2129553451 @default.
• W2952693114 cites W2157180100 @default.
• W2952693114 cites W2194534706 @default.
• W2952693114 cites W2288156765 @default.
• W2952693114 cites W2318692914 @default.
• W2952693114 cites W2325999434 @default.
• W2952693114 cites W2328412715 @default.
• W2952693114 cites W2332278225 @default.
• W2952693114 cites W2335685603 @default.
• W2952693114 cites W2465510599 @default.
• W2952693114 cites W2470170989 @default.
• W2952693114 cites W2472411688 @default.
• W2952693114 cites W2474791916 @default.
• W2952693114 cites W2503727994 @default.
• W2952693114 cites W2510501170 @default.
• W2952693114 cites W2524299558 @default.
• W2952693114 cites W2528558896 @default.
• W2952693114 cites W2560834721 @default.
• W2952693114 cites W2587857022 @default.
• W2952693114 cites W2611031476 @default.
• W2952693114 cites W2615204552 @default.
• W2952693114 cites W2734793233 @default.
• W2952693114 cites W2737860679 @default.
• W2952693114 cites W2745661510 @default.
• W2952693114 cites W2765336661 @default.
• W2952693114 cites W2789806238 @default.
• W2952693114 cites W2800477154 @default.
• W2952693114 cites W2802407191 @default.
• W2952693114 cites W2804181865 @default.
• W2952693114 cites W2883125212 @default.
• W2952693114 cites W2888986454 @default.
• W2952693114 cites W2949474005 @default.
• W2952693114 cites W2963435352 @default.
• W2952693114 cites W3102637849 @default.
• W2952693114 cites W3103538292 @default.
• W2952693114 cites W3104541983 @default.
• W2952693114 cites W3105426776 @default.
• W2952693114 doi "https://doi.org/10.1088/2053-1583/ab28f2" @default.
• W2952693114 hasPublicationYear "2019" @default.
• W2952693114 type Work @default.
• W2952693114 sameAs 2952693114 @default.
• W2952693114 citedByCount "29" @default.
• W2952693114 countsByYear W29526931142019 @default.
• W2952693114 countsByYear W29526931142020 @default.
• W2952693114 countsByYear W29526931142021 @default.
• W2952693114 countsByYear W29526931142022 @default.
• W2952693114 countsByYear W29526931142023 @default.
• W2952693114 crossrefType "journal-article" @default.
• W2952693114 hasAuthorship W2952693114A5003579890 @default.
• W2952693114 hasAuthorship W2952693114A5008733416 @default.
• W2952693114 hasAuthorship W2952693114A5012113227 @default.
• W2952693114 hasAuthorship W2952693114A5026635084 @default.
• W2952693114 hasAuthorship W2952693114A5029004425 @default.
• W2952693114 hasAuthorship W2952693114A5047987940 @default.
• W2952693114 hasAuthorship W2952693114A5048990991 @default.

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