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• W2953101909 abstract "A memory capacitor incorporating a designed Zr x Si1-x O2 trapping layer with a double-potential well bandgap is fabricated and investigated. Compared to single potential well and flat energy band, the double-potential well improves memory characteristics, and a faster program time of 9 × 10−6 s at +6 V flat band voltage shift, a lower charge loss of 3.6% at 200 °C up to 104 s, and a wider charge loss temperature insensitive range of 20 °C–134 °C can be obtained. The results indicate that the double-potential well bandgap is an appealing energy band structure for future nonvolatile memory applications." @default.
• W2953101909 created "2019-06-27" @default.
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• W2953101909 date "2019-06-21" @default.
• W2953101909 modified "2023-09-29" @default.
• W2953101909 title "Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer" @default.
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• W2953101909 doi "https://doi.org/10.7567/1882-0786/ab282e" @default.
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