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• W2953278788 abstract "The focus of this work is on the investigation of the electronic structure at interfaces of inverted organic solar cells and energetic states in the band gap of the anatase (101) surface.Inverted organic solar cells are a promising alternative to conventional inorganic solar cells, regarding the potentially low production costs and its variety in possible applications. Inverted organic solar cells sometimes exhibit S-shaped I-V characteristics instead of diode-like I-V characteristics, which results in a decrease of the efficiency of the solar cells. The electronic alignment at the interface between the different materials within the solar cell influences strongly the functionality and efficiency of the solarcell. The contact formation between the materials depends on the materials itself, butalso on the specific surface, e.g. adsorbates covering it. This work compares I-V characteristics of different solar cell device stacks with the respective energy diagrams. The investigation of the interface is mainly done by photoelectron spectroscopy, which is apowerful method to determine the electronic alignment at the interface between different materials. The shape of the I-V characteristics of inverted organic solar cells oftendepends on the used metal oxide (which acts as electron transporting layer) within thesolar cell device stack. Typical electron transport layers are TiOx and aluminum dopedzinc oxide (AZO). Inverted organic solar cells with PC61BM:P3HT as absorber materialand AZO as electron transport layer show diode-like I-V characteristics, whereas solarcells with TiOx as electron transport layer show S-shaped I-V characteristics. Using abilayer consisting of TiOx:AZO or AZO:TiOx as electron transport layer, only solar cellswhere the TiOx forms the interface to PC 61 BM show S-shaped I-V characteristics. Inmodel experiments, C60 replaces PC61BM and the interface of C60 to TiOx and AZO isdetermined by means of photoelectron spectroscopy. The interface energy diagram ofthe TiOx/C60 interface displays a barrier for electron extraction, whereas the AZO/C60interface does not. Interface experiments of C 60 with in situ (adsorbate free) and ex situ(adsorbate contaminated) cleaved anatase single crystals show the crucial influence ofadsorbates on the formation of the electronic interface between the metal oxide andthe organic absorber. Additional experiments show that the S-shaped I-V characteristicswith TiOx as electron transport layer transform into diode-like characteristics uponillumination with UV light. In situ UV illumination of the TiOx/C 60 interface with UVlight induces changes of the band alignment, which result in a decrease of the electronextraction barrier at the TiOx/C60 interface. Furthermore the reduction of the barrier is most probably caused by UV induced desorption of oxygen from the TiOx surface.The second part focuses on fundamental investigations of the anatase (101) surface.For this purpose, anatase single crystals are cleaved along the (101) surface plane bypliers and a clean (101) surface, without any further preparation methods such assputtering and annealing, is obtained. Analyzing and comparing differently preparedtitania samples by normal and resonant photoemission reveals the existence of shallowband gap states at the crystalline anatase surface. The origin of those shallow gapstates is assigned to step edges of monoatomic height at the anatase (101) surface andrespectively to the intersections of (101) surface planes of nanocrystalline anatase. Inwater adsorption experiments, the adsorption kinetics of water onto the anatase (101)surface are investigated in more detail." @default.
• W2953278788 created "2019-06-27" @default.
• W2953278788 creator A5068880065 @default.
• W2953278788 date "2019-01-01" @default.
• W2953278788 modified "2023-09-23" @default.
• W2953278788 title "Electronic properties of titania (and AZO) and its interface to organic acceptor materials" @default.
• W2953278788 hasPublicationYear "2019" @default.
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