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- W2953303986 abstract "Abstract Our recent progress in low-temperature molecular beam epitaxy of ferromagnetic Heusler alloys on group-IV-semiconductor is reviewed. By optimizing beam flux ratio (Fe:Si = 3:1) and growth temperature (130 °C), a high-quality hybrid structure, i.e., DO 3 -type Fe 3 Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.9 Oe) and electrical properties with Schottky barrier height of 0.52 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was on the order of 10 4 . In addition, heteroepitaxy of half-metallic alloys (Fe 3 − X Mn x Si( X = 0.6–1.4)) on Ge substrates was demonstrated. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and ferromagnetic source/drain for spin-injection." @default.
- W2953303986 created "2019-06-27" @default.
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- W2953303986 date "2010-05-25" @default.
- W2953303986 modified "2023-09-25" @default.
- W2953303986 title "ChemInform Abstract: Molecular Beam Epitaxial Growth of Ferromagnetic Heusler Alloys for Group-IV Semiconductor Spintronic Devices" @default.
- W2953303986 cites W2018297322 @default.
- W2953303986 doi "https://doi.org/10.1002/chin.201021215" @default.
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