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- W2953395500 abstract "Results of experiments on single‐crystalline silicon wafers that allow for the determination of the degree of photo‐elastic anisotropy A pe are presented. A pe is introduced as an absolute value of ( π 11 − π 12 − π 44 )/( π 11 − π 12 + π 44 ), where π 11 , π 12 , and π 44 are the piezo‐optical coefficients. These experiments are performed using the measurement system scanning infrared depolarization (SIRD) imager equipped with a special calibration set‐up that produces a defined diametrical loading of the wafer. The generated depolarization maps are compared with simulation results based on a classic 2D stress model, taking the crystallographic anisotropy of silicon into account, by applying the full tensor calculus. The best‐matching material constants used for simulation are compared with data being available from external publications. A pe is determined to be 0.21 ± 0.01 at a wavelength λ = 1.3 μm. Conclusions in view of current studies on other semiconductor material systems are discussed." @default.
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- W2953395500 date "2019-07-24" @default.
- W2953395500 modified "2023-09-27" @default.
- W2953395500 title "The Photo‐Elastic Constant of Silicon Reviewed in Experiment and Simulation" @default.
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- W2953395500 doi "https://doi.org/10.1002/pssa.201900254" @default.
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