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• W2953567658 endingPage "12877" @default.
• W2953567658 startingPage "12871" @default.
• W2953567658 abstract "Recently, there have been various attempts to demonstrate the feasibility of transition metal dichalcogenide (TMD) transistors for digital logic circuits. A complementary inverter circuit, which is a basic building block of a logic circuit, was implemented in earlier works by heterogeneously integrating n- and p-channel transistors fabricated on different TMD materials. Subsequently, to simplify the circuit design and fabrication process, complementary inverters were constructed on single-TMD materials using ambipolar transistors. However, continuous transition from the electron-conduction to the hole-conduction state in the ambipolar devices led to the problem of a high leakage current. Here, we report a polarity-controllable TMD transistor that can operate as both an n- and a p-channel transistor with a low leakage current of a few picoamperes. The device polarity can be switched simply by converting the sign of the drain voltage. This is because a metal-like tungsten ditelluride (WTe2) with a low carrier concentration is used as a drain contact, which subsequently allows selective carrier injection at the palladium/tungsten diselenide (WSe2) junction. In addition, by using the operating principle of the polarity-controllable transistor, we demonstrate a complementary inverter circuit on a single TMD channel material (WSe2), which exhibits a very low static power consumption of a few hundred picowatts. Finally, we confirm the expandability of this polarity-controllable transistor toward more complex logic circuits by presenting the proper operation of a three-stage ring oscillator." @default.
• W2953567658 created "2019-07-12" @default.
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• W2953567658 date "2019-01-01" @default.
• W2953567658 modified "2023-10-18" @default.
• W2953567658 title "Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits" @default.
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• W2953567658 doi "https://doi.org/10.1039/c9nr03441b" @default.
• W2953567658 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/31243409" @default.
• W2953567658 hasPublicationYear "2019" @default.
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