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- W2953773951 abstract "In this paper, we investigate the negative bias temperature instability (NBTI) on conventional P-type metal-oxide-semiconductor field effect transistors (PMOSFET) using on-fly bulk trap technique (..." @default.
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- W2953773951 date "2019-07-02" @default.
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- W2953773951 title "Simple and fast simulation approach to investigate the NBTI effect on suspended gate MOS devices" @default.
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- W2953773951 doi "https://doi.org/10.1080/21681724.2019.1625961" @default.
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