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• W2954659078 endingPage "27087" @default.
• W2954659078 startingPage "27073" @default.
• W2954659078 abstract "Preparation of rectifying Schottky contacts on n-type oxide semiconductors, such as indium oxide (In2O3), is often challenged by the presence of a distinct surface electron accumulation layer. We investigated the material properties and electrical transport characteristics of platinum contact/indium oxide heterojunctions to define routines for the preparation of high-performance Schottky diodes on n-type oxide semiconductors. Combining the evaluation of different Pt deposition methods, such as electron-beam evaporation and (reactive) sputtering in an (O and) Ar atmosphere, with oxygen plasma interface treatments, we identify key parameters to obtain Schottky-type contacts with high electronic barrier height and high rectification ratio. Different photoelectron spectroscopy approaches are compared to characterize the chemical properties of the contact layers and the interface region toward In2O3, to analyze charge transfer and plasma oxidation processes as well as to evaluate the precision and limits of different methodologies to determine heterointerface energy barriers. An oxygen-plasma-induced passivation of the semiconductor surface, which induces electron depletion and generates an intrinsic interface energy barrier, is found to be not sufficient to generate rectifying platinum contacts. The dissolution of the functional interface oxide layer within the Pt film results in an energy barrier of ∼0.5 eV, which is too low for an In2O3 electron concentration of ∼1018 cm–3. A reactive sputter process in an Ar and O atmosphere is required to fabricate rectifying contacts that are composed of platinum oxide (PtOx). Combining oxygen plasma interface oxidation of the semiconductor surface with reactive sputtering of PtOx layers results in the generation of a high Schottky barrier of ∼0.9 eV and a rectification ratio of up to 106. An additional oxygen plasma treatment after contact deposition further reduced the reverse leakage current, likely by eliminating a surface conduction path between the coplanar Ohmic and Schottky contacts. We conclude that processes that allow us to increase the oxygen content in the interface and contact region are essential for fabrication of device-quality-rectifying contacts on various oxide semiconductors." @default.
• W2954659078 created "2019-07-12" @default.
• W2954659078 creator A5002271787 @default.
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• W2954659078 creator A5085744383 @default.
• W2954659078 date "2019-07-04" @default.
• W2954659078 modified "2023-10-17" @default.
• W2954659078 title "Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In₂O₃" @default.
• W2954659078 cites W1593953103 @default.
• W2954659078 cites W1628269443 @default.
• W2954659078 cites W1966576274 @default.
• W2954659078 cites W1966955846 @default.
• W2954659078 cites W1967408822 @default.
• W2954659078 cites W1967901268 @default.
• W2954659078 cites W1969655303 @default.
• W2954659078 cites W1973431805 @default.
• W2954659078 cites W1973840194 @default.
• W2954659078 cites W1981284677 @default.
• W2954659078 cites W1989954101 @default.
• W2954659078 cites W1990504384 @default.
• W2954659078 cites W1990986561 @default.
• W2954659078 cites W1991849163 @default.
• W2954659078 cites W1998260542 @default.
• W2954659078 cites W2004967694 @default.
• W2954659078 cites W2005855119 @default.
• W2954659078 cites W2009907357 @default.
• W2954659078 cites W2015432317 @default.
• W2954659078 cites W2015895407 @default.
• W2954659078 cites W2016458599 @default.
• W2954659078 cites W2017161853 @default.
• W2954659078 cites W2018898077 @default.
• W2954659078 cites W2021127244 @default.
• W2954659078 cites W2023993004 @default.
• W2954659078 cites W2032306276 @default.
• W2954659078 cites W2032378255 @default.
• W2954659078 cites W2036934862 @default.
• W2954659078 cites W2038144306 @default.
• W2954659078 cites W2045512369 @default.
• W2954659078 cites W2048836775 @default.
• W2954659078 cites W2055740220 @default.
• W2954659078 cites W2057853329 @default.
• W2954659078 cites W2059606061 @default.
• W2954659078 cites W2061247773 @default.
• W2954659078 cites W2061501130 @default.
• W2954659078 cites W2063506818 @default.
• W2954659078 cites W2064067009 @default.
• W2954659078 cites W2068093798 @default.
• W2954659078 cites W2069170708 @default.
• W2954659078 cites W2070560627 @default.
• W2954659078 cites W2075221606 @default.
• W2954659078 cites W2075884988 @default.
• W2954659078 cites W2077357514 @default.
• W2954659078 cites W2078449864 @default.
• W2954659078 cites W2078777502 @default.
• W2954659078 cites W2079886019 @default.
• W2954659078 cites W2082034344 @default.
• W2954659078 cites W2090172423 @default.
• W2954659078 cites W2091703014 @default.
• W2954659078 cites W2108179034 @default.
• W2954659078 cites W2109077896 @default.
• W2954659078 cites W2109556065 @default.
• W2954659078 cites W2109710272 @default.
• W2954659078 cites W2112348724 @default.
• W2954659078 cites W2114696551 @default.
• W2954659078 cites W2115781321 @default.
• W2954659078 cites W2123709254 @default.
• W2954659078 cites W2124575672 @default.
• W2954659078 cites W2127747603 @default.
• W2954659078 cites W2134960271 @default.
• W2954659078 cites W2150169375 @default.
• W2954659078 cites W2150336986 @default.
• W2954659078 cites W2151956990 @default.
• W2954659078 cites W2152045306 @default.
• W2954659078 cites W2156437265 @default.
• W2954659078 cites W2167035995 @default.
• W2954659078 cites W2235439386 @default.
• W2954659078 cites W2289735694 @default.
• W2954659078 cites W2297314540 @default.
• W2954659078 cites W2313484347 @default.
• W2954659078 cites W2321555592 @default.
• W2954659078 cites W2333956673 @default.
• W2954659078 cites W2516644458 @default.
• W2954659078 cites W2561207455 @default.
• W2954659078 cites W2567534065 @default.
• W2954659078 cites W2569703642 @default.
• W2954659078 cites W2584055354 @default.
• W2954659078 cites W2594967495 @default.
• W2954659078 cites W2730396179 @default.
• W2954659078 cites W2754457741 @default.
• W2954659078 cites W2776272745 @default.
• W2954659078 cites W2788346497 @default.

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