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• W2954694819 abstract "We show that secondary electrons in a scanning electron microscope can provide important information about spatial dopant distribution in p-i-n GaN structures, with the highest contrast observed for a primary electron beam accelerating voltage in the range of 1 to 2 kV. The current through the specimen is used to determine the total backscattered and secondary electron yield. We establish a correlation between the secondary electron emission intensity and the doping characteristics of the material. The secondary electron emission intensity was found to be highest for p-type GaN, intermediate for n-type GaN, and lowest for undoped GaN. Specimen currents are found to have a strong correlation with the Mg concentration in p-GaN films. The contrast associated with dopants is shown to depend on experimental parameters such as primary electron beam voltage, total electron beam exposure, and specimen surface history. This technique can serve as a powerful tool for the development and characterization of thin films for GaN power electronics." @default.
• W2954694819 created "2019-07-12" @default.
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• W2954694819 date "2019-07-02" @default.
• W2954694819 modified "2023-10-16" @default.
• W2954694819 title "Dopant profiling in <i>p-i-n</i> GaN structures using secondary electrons" @default.
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• W2954694819 doi "https://doi.org/10.1063/1.5096273" @default.
• W2954694819 hasPublicationYear "2019" @default.
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