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• W2955149801 abstract "Sn-doped In2O3 (ITO) nanoparticles with various Sn doping concentrations were successfully fabricated using a liquid phase coprecipitation method. Similar to sputtered ITO thin films, Sn doping reaches a maximum carrier density (1.52×1021cm−3) at 10 at. % in ITO nanoparticles, which was estimated from the bulk plasmon energy based on a scanning ellipsometry (SE) simulation. Interestingly, the X-ray photoelectron emission spectra (XPS) of In 3d core levels show a clear asymmetric peak with a shoulder on the high-binding-energy side for degenerated ITO nanoparticles, which may be associated with the influence of the surface plasmon or plasmonic coupling. Our results suggest that combining the SE simulation and XPS measurements effectively provides a new way to understand the difference between bulk plasmons and surface plasmons for transparent conductive oxide nanoparticles." @default.
• W2955149801 created "2019-07-12" @default.
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• W2955149801 date "2019-06-25" @default.
• W2955149801 modified "2023-10-16" @default.
• W2955149801 title "Carrier densities of Sn-doped In 2O 3 nanoparticles and their effect on X-ray photoelectron emission" @default.
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• W2955149801 doi "https://doi.org/10.1063/1.5096364" @default.
• W2955149801 hasPublicationYear "2019" @default.
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