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• W2955178081 abstract "The present research work focuses on the growth and characterization of group III-Nitride (InGaN) epitaxial layers as well as nanostructures on Si(111) substrates. The growth system used in this study was a plasma-assisted molecular beam epitaxy (PAMBE) system equipped with a radio frequency (RF) plasma source. Device quality GaN epilayers were obtained and InGaN/Si(111) heterojunctions were studied. In- GaN based multi-quantum well LED structure has been realized for green emission. Further catalyst free ultra fine GaN nanorods were grown using a two step method and further InGaN nanostructures were embedded in the as-grown nanorods. InGaN quantum dots were grown using droplet epitaxy and were characterized by Scanning Tunnelling Microscopy and Spectroscopy. It gives a brief introduction about III-nitride materials, growth, substrate selection, significance of III-Nitrides and Si integration and role of dimensionality. It deals with experimental techniques including the details of PAMBE system used in this work, substrate preparation, and detailed characterization of III-nitride epitaxial layers as well as nanostructures. It deals with the optimization of GaN epilayers on AlN/Si (111) templates. AlN underlayer was chosen to minimize the concentration of defects and also acts as an insulating layer which is crucial when it comes to integration of many other devices. The growth temperature was optimized under nitrogen rich growth regime and with the use of a thinner and better quality AlN underlayer and Si doping we could achieve device quality epilayers ( 1500 arc sec) for a thickness of 150 nm. The electron concentration and mobility were found to be -1.374 _1019cm􀀀3 (indicating n-type) and 72 cm2/V.s. Current-voltage measurements were carried out in temperature range of 77K-400K and the current conduction mechanisms at room temperature were identified. An in-depth analysis of temperature dependent current-voltage measurements reveal that the barrier height at the interface is not uniform and is found to have a double Gaussian distribution of barrier heights. It deals with the growth of InGaN epilayers on Si (111) with various substrate treatments. Actual indium composition was determined considering the bi-axial strain present in the epilayers. The effect of substrate treatment on epilayers evolution and quality are discussed. We could observe room temperature photoluminescence from the as-grown epilayers indicating that the epilayers are of good optical quality. InGaN/Si heterojunctions were studied for UV-detection applications. It was found that the heterojunction behaved as a self-powered device, i.e., the device showed a sharp rise in the photocurrent under UV illumination at zero bias. The rise and decay times were found to be 20ms and 33 ms respectively. The bandgap of grown InGaN epilayers were tuned for emission in Green wavelength range. (500nm-550nm) It discusses the sequential process involved in the unition of individual layers to successfully achieve a multi- quantum well structure. In the…" @default.
• W2955178081 created "2019-07-12" @default.
• W2955178081 creator A5030695577 @default.
• W2955178081 date "2019-06-11" @default.
• W2955178081 modified "2023-09-23" @default.
• W2955178081 title "InGaN Based 2D, 1D and 0D Heterostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy" @default.
• W2955178081 hasPublicationYear "2019" @default.
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