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• W2955604651 abstract "InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong coupling between superconductors and semiconductors. However, it is still challenging to obtain a high-quality InSb two-dimensional electron gas in quantum wells close to the surface. Here we report on a molecular beam epitaxy grown heterostructure of InSb quantum wells with substrate-side Si-doping and ultra-thin InAlSb (5 nm, 25 nm, and 50 nm) barriers to the surface. We demonstrate that the carrier densities in these quantum wells are gate-tunable and electron mobilities up to 350,000 $rm{cm^2(Vs)^{-1}}$ are extracted from magneto-transport measurements. Furthermore, from temperature-dependent magneto-resistance measurements, we extract an effective mass of 0.02 $m_0$ and find a Zeeman splitting compatible with the expected g-factor." @default.
• W2955604651 created "2019-07-12" @default.
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• W2955604651 date "2019-07-01" @default.
• W2955604651 modified "2023-10-16" @default.
• W2955604651 title "Quantum transport in high-quality shallow InSb quantum wells" @default.
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• W2955604651 doi "https://doi.org/10.1063/1.5098294" @default.
• W2955604651 hasPublicationYear "2019" @default.
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