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- W2955783453 abstract "This paper reports the influence of B-site modification by hetrovalent and isovalent dopants in barium titanate. The phase formation mechanism with increase in doping levels is studied using x-ray diffraction studies. Change in surface morphology is examined with the help of SEM micrographs. Dielectric and electrical properties are studied at a frequency of 100 kHz and temperature (RT- 200 °C). It is observed that due to Nb–Zr doping in barium titanate at titanium site lowers the Curie temperature as well as dielectric constant. However the dielectric constant of the doped ceramics remains higher than that of pure barium titanate. Conductivity studies show that mechanism of charge compensation as a result of introduction of Nb5+ into the BaTi0.85Zr0.15O3 crystal lattice involves ionic compensation and probably the mechanism involves creation of barium vacancies and reduction of titanium from Ti4+ to Ti3+ state." @default.
- W2955783453 created "2019-07-12" @default.
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- W2955783453 date "2019-07-10" @default.
- W2955783453 modified "2023-09-26" @default.
- W2955783453 title "Influence of B-site modification by hetrovalent (Nb<sup>5+</sup>) and isovalent (Zr<sup>4+</sup>) dopants in BaTiO<sub>3</sub> on its dielectric and electrical properties synthesized by novel sol gel route" @default.
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- W2955783453 doi "https://doi.org/10.1088/2053-1591/ab2dee" @default.
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