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- W2955794150 abstract "As one of appealing NAND flash replacements, resistance switching random access memory (RRAM) has been hotly investigated due to its simple structure, high read speed and considerable retention. TaO x is a promising candidate as the insulators in the resistance switching random access memory. The switching uniformity and the associated reliability are particularly important for industrialization. In this paper, we fabricate ITO/TaO x /TiN memory device with four groups of different thickness TaO x films: 15nm, 20nm, 25nm and 30nm. The results show that the electroforming voltages of the devices are approximately proportional to the thickness of the TaO x films. On the basis of the conducting filament theory, we infer that it is more difficult for devices to hard breakdown with film thicknesses increasing. This will further affect the uniformity and window (R HRS /R LRS ) of the device. However, the endurance of the 30nm TaO x is relatively poor. Therefore, 25nm is the best thickness in terms of uniformity and endurance of the devices." @default.
- W2955794150 created "2019-07-12" @default.
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- W2955794150 date "2019-03-01" @default.
- W2955794150 modified "2023-10-15" @default.
- W2955794150 title "Thickness-Dominated Forming Conditions of TaOx-Based Memristor" @default.
- W2955794150 doi "https://doi.org/10.1109/cstic.2019.8755614" @default.
- W2955794150 hasPublicationYear "2019" @default.
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