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- W2956026354 abstract "Abstract In this study, we investigated the characteristics of densification, phase formation, and electrical properties during reaction sintering when a Ga-doped ITO, with 10 at% Sn, served as the target material. Results showed that Ga doping enhanced the densification of ITO at a relatively low sintering temperature. Interestingly, the 1 at% Ga- and 20 at% Ga-doped samples showed shrinkage values of 19.5% and 23.0%, respectively, despite the fact they both starting shrinking at the same temperature. In addition, the second phase Ga3-xIn5+xSn2O16 was formed at 5 at% Ga-doped ITO. Moreover, the ITO lattice parameters decreased up to 40 at% Ga doping, since the ionic radius of Ga3+ is smaller than that of In3+. Furthermore, as the Ga concentration increased, the carrier concentration and mobility decreased and resistivity increased. These modifications are thought to result from an increasing quantity of the Ga3-xIn5+xSn2O16 s phase and the corresponding resistivity increase, both of which occur as a function of increasing Ga concentration." @default.
- W2956026354 created "2019-07-12" @default.
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- W2956026354 date "2019-11-01" @default.
- W2956026354 modified "2023-09-24" @default.
- W2956026354 title "Reaction sintering behavior and electrical properties of a Ga-doped ITO system" @default.
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- W2956026354 doi "https://doi.org/10.1016/j.ceramint.2019.07.051" @default.
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