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- W2956209711 abstract "Abstract The dual directional silicon-controlled rectifier (DDSCR) device is widely used in on-chip electrostatic discharge (ESD) protection owing to its bi-directional ESD protection and strong current-tolerating capability per area. In this paper, an asymmetrical dual directional ESD protection device for automotive application was developed in a 0.18-µm Bipolar CMOS DMOS (BCD) technology. In order to verify and predict the proposed ESD protection device’s characteristics, a transmission line pulse (TLP) testing system and a 2-dimension device simulation platform have been used in this work. According to the measurement results, the asymmetrical dual directional silicon-controlled rectifier with a floating P+ region (ADDSCR_FP+) increases the forward holding voltage (Vh) from 3.89 V to 19.7 V and increases the reverse holding voltage from 3.62 V to 19.5 V which only slightly decrease the failure current compared with the traditional asymmetrical dual directional silicon-controlled rectifier (ADDSCR). The ADDSCR_FP+ has the features of symmetrical forward and reverse I-V curves, high holding voltage and high failure current." @default.
- W2956209711 created "2019-07-23" @default.
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- W2956209711 date "2019-10-01" @default.
- W2956209711 modified "2023-10-17" @default.
- W2956209711 title "An ESD robust high holding voltage dual-direction SCR with symmetrical I-V curve by inserting a floating P+ in PWell" @default.
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- W2956209711 doi "https://doi.org/10.1016/j.sse.2019.107627" @default.
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