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- W2957262945 abstract "Abstract Ferroelectrics represented by lead zirconate titanate (Pb(ZrTi)O3:PZT) has been extensively studied in thin-film form mainly for potential applications in nonvolatile ferroelectric random access memories and microelectromechanical systems, such as membrane-type micro-pumps, atomic force microscopy cantilevers, and micro-scanning mirror devices. Many thin-film fabrication techniques, such as sputtering, pulsed laser deposition, metalorganic chemical vapor deposition, and the sol–gel method, have been used to fabricate ferroelectric thin films on Pt/Ti/SiO2/Si substrates. However, to obtain high-quality PZT films on Pt/Ti/SiO2/Si, a high substrate temperature (in the case of in situ deposition) or postdeposition annealing temperature (in the case of films deposited at lower substrate temperatures or room temperature) is usually required (in the range of 600°C–750°C). Thermal treatment at this high temperature can induce evaporation of lead and lead oxide from the surface of films, thus causing the loss of the films’ stoichiometry. Furthermore, interdiffusions between the elements of the films and substrate will be exacerbated at elevated temperatures, which can seriously damage the wafer stack. Lastly, from material integration point of view, the fabrication process of ferroelectric thin film devices has to be compatible with the standard CMOS-Si process commonly used in the semiconductor/microelectronics industry. Therefore it is essential to, whenever possible, reduce the deposition or annealing temperature of ferroelectric films. In this chapter, we first introduce the low-temperature processing of ferroelectric thin films annealed by microwave irradiation. In the second half of this chapter, we will introduce the low-temperature processing of ferroelectric thin films deposited by magnetron sputtering." @default.
- W2957262945 created "2019-07-23" @default.
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- W2957262945 date "2019-01-01" @default.
- W2957262945 modified "2023-10-18" @default.
- W2957262945 title "Low-temperature processing of ferroelectric thin films on Si substrates" @default.
- W2957262945 doi "https://doi.org/10.1016/b978-0-12-813856-4.00007-7" @default.
- W2957262945 hasPublicationYear "2019" @default.
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