Matches in SemOpenAlex for { <https://semopenalex.org/work/W2958244801> ?p ?o ?g. }
- W2958244801 abstract "Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multiqubit operations in quantum-dot spin qubits. We investigate the dependence of low-frequency charge noise spectra on temperature and aluminum-oxide gate dielectric thickness in Si/SiGe quantum dots with overlapping gates. We find that charge noise increases with aluminum-oxide thickness. We also find strong dot-to-dot variations in the temperature dependence of the noise magnitude and spectrum. These findings suggest that each quantum dot experiences noise caused by a distinct ensemble of two-level systems, each of which has a nonuniform distribution of thermal activation energies. Taken together, our results suggest that charge noise in Si/SiGe quantum dots originates at least in part from a nonuniform distribution of two-level systems near the surface of the semiconductor." @default.
- W2958244801 created "2019-07-23" @default.
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- W2958244801 date "2019-10-23" @default.
- W2958244801 modified "2023-10-17" @default.
- W2958244801 title "Low-frequency charge noise in Si/SiGe quantum dots" @default.
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- W2958244801 doi "https://doi.org/10.1103/physrevb.100.165305" @default.
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