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• W2958500739 abstract "A guard ring (GR) was employed to improve the breakdown voltage (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>br</sub> ) of vertical Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> Schottky barrier diodes (SBDs) with or without a field-plate (FP) by eliminating electric field concentration at the edges of anode and FP electrodes. The GR structure was formed by nitrogen (N)-ion implantation. Four types of vertical SBD structures with: 1) neither a GR nor a FP; 2) a GR; 3) a FP; and 4) both a GR and a FP were fabricated on the same substrate. The SBDs with a GR [structures 2) and 4)] showed larger V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>br</sub> values than their GR-free counterparts [structures 1) and 3)]. Considering the trade-off relationship between V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>br</sub> and specific on-resistance (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</sub> ), a V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>br</sub> /R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</sub> combination of 1.43 kV/4.7 mΩ · cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> for the GR/FP-SBD corresponds to one of the best balanced data for Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> SBDs." @default.
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• W2958500739 date "2019-09-01" @default.
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• W2958500739 title "Vertical Ga₂O₃ Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation" @default.
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• W2958500739 doi "https://doi.org/10.1109/led.2019.2927790" @default.
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