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- W2958718610 abstract "For realizing high power generator efficiency based on thermoelectricity, Si, Ge and SiGe nanostructures have attracted attention. In this paper, we have investigated a new approach to fabricate an ultrathin polycrystalline SiGe-on-insulator (pc-SGOI) substrate by a simple process based on Si and Ge deposition followed by thermal diffusion suitable for thermoelectric devices. A 45-nm-thick SGOI layer with a Ge fraction of nearly 0.45 was fabricated, and the Ge fraction was homogeneous in plane over the layer. Its thermal conductivity was 0.87 W mK−1, lower than that of a single-crystalline SGOI layer. This is caused by the enhancement of scattering of phonons at grain boundaries in the pc-SGOI layer." @default.
- W2958718610 created "2019-07-23" @default.
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- W2958718610 date "2019-07-01" @default.
- W2958718610 modified "2023-09-26" @default.
- W2958718610 title "Fabrication of ultrathin poly-crystalline SiGe-on-insulator layer for thermoelectric applications" @default.
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- W2958718610 doi "https://doi.org/10.1088/2399-6528/ab302f" @default.
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