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• W2959883463 endingPage "095611" @default.
• W2959883463 startingPage "095611" @default.
• W2959883463 abstract "Direct growth of large area uniform high quality graphene films on dielectric or semiconductor substrate is very important for graphene application in electronic devices. In this paper, a simple method is introduced to directly grow uniform and large area bi-layer graphene films on silicon substrates by chemical vapor deposition. Raman spectroscopy, x-ray photoelectron spectroscopy, atomic force microscopy and electrical transport measurements are employed to characterize and evaluate the quality of the as-synthesized graphene films. Raman mapping indicates that the graphene film on silicon substrate is large area uniformity. The graphene-based electronic device is fabricated and the measured mobility of the directly grown graphene film is 343.3 cm2/(V.S). These as-synthesized graphene films may have potential applications in conducted films, electronic devices, etc." @default.
• W2959883463 created "2019-07-23" @default.
• W2959883463 creator A5037677450 @default.
• W2959883463 creator A5075904859 @default.
• W2959883463 date "2019-07-17" @default.
• W2959883463 modified "2023-09-25" @default.
• W2959883463 title "Direct growth of large area uniform bi-layer graphene films on silicon substrates by chemical vapor deposition" @default.
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• W2959883463 doi "https://doi.org/10.1088/2053-1591/ab3098" @default.
• W2959883463 hasPublicationYear "2019" @default.
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