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- W2960293854 abstract "A better understanding of the diode reverse-recovery behavior of power MOSFET is critical when designing a power electronics systems with faster switching speed, minimum switching losses, and higher system efficiency. In order to study the switching transient times, one needs to focus on both switching device architecture and circuit parasitic inductances and capacitances. The goal of this paper is to study the MOSFET device structure and circuit elements, and their impacts on reverse recovery characteristics when MOSFET is used as a Synchronous Rectifier (SR). This paper will present the role of the drain-to-shield capacitance of the shielded-gate MOSFET on the reverse recovery current and voltage transients. Mixed-mode TCAD simulation is performed to study the intricate reverse-recovery behavior observed in the shielded-gate trench MOSFETs." @default.
- W2960293854 created "2019-07-23" @default.
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- W2960293854 date "2019-05-01" @default.
- W2960293854 modified "2023-09-25" @default.
- W2960293854 title "Diode Reverse Recovery Characteristics of a Shielded-Gate Trench Power MOSFET" @default.
- W2960293854 doi "https://doi.org/10.1109/ispsd.2019.8757673" @default.
- W2960293854 hasPublicationYear "2019" @default.
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