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- W2961872205 abstract "Large-scale SiC nanoarrays with well-aligned configurations have attracted wide attention due to their significance for exploring novel optoelectronic devices. However, their controlled growth, especially under mild conditions (e.g., under air conditions), is still a great challenge. In the present work, the effects of some critically important parameters on the electrochemical etching approach, such as surfactant content, electrolyte temperature, hydrochloric acid, and the duty ratio of employed pulse voltages, were investigated to determine their effects on the development of 4H–SiC nanoarrays. It was found that the optimization of these four experimental parameters could facilitate the etching of SiC nanoarrays with improved uniformity, modulated diameter and wall thickness, tunable etching rates, and tailored morphologies, leading to a controlled growth. The possible etching mechanisms for the formation of SiC nanoarrays under different etching conditions were proposed." @default.
- W2961872205 created "2019-07-23" @default.
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- W2961872205 date "2019-12-01" @default.
- W2961872205 modified "2023-10-11" @default.
- W2961872205 title "Mild fabrication of large-scale and well-aligned 4H–SiC nanoarrays with controlled configurations" @default.
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- W2961872205 doi "https://doi.org/10.1016/j.ceramint.2019.07.207" @default.
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