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• W2963053929 abstract "To realize fully topological transport for any device applications it is essential to tune the chemical potential in the bulk gap of the Dirac cone. Bi2Se3 (BS) and Bi2Te3 (BT) thin films do not show in general topological transport as the chemical potential doesn’t lie entirely in the bulk gap. We report the successful formation of bulk insulating ternary topological insulators Bi2Se2Te (BST) by double target pulsed laser deposition technique. The films were deposited with sequential ablation of separate BS and BT targets. From the X-ray diffraction analysis and temperature dependent resistivity, we were able to conclude that the as-grown thin films have ordered chalcogen layers and the chemical potential in these thin films lie in the bulk gap. We have been able to achieve this fully topological transport in our sample grown by this technique. Our Magnetotransport data exhibits pronounced two-dimensional weak-antilocalization behavior (WAL) at low temperatures. It was possible to tune the chemical potential at will in the gap by depositing thin films through pulsed laser deposition technique using this simple and cost effective double target approach to grow quaternary TI thin films." @default.
• W2963053929 created "2019-07-30" @default.
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• W2963053929 date "2017-10-01" @default.
• W2963053929 modified "2023-09-27" @default.
• W2963053929 title "Tuning chemical potential in the dirac cone by compositional engineering" @default.
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• W2963053929 doi "https://doi.org/10.1063/1.4999254" @default.
• W2963053929 hasPublicationYear "2017" @default.
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