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• W2963294581 abstract "We present a novel silicon photomultiplier based on a shallow junction obtained within a standard 0.35 ${mu }text{m}$ complementary metal oxide semiconductor process. The sensitive structure is equipped with a dedicated optical window as well as an optimized antireflective coating. The device exhibits performances comparable to custom-based commercial technologies: an unprecedented photon detection efficiency of 43% at 420 nm, a breakdown voltage temperature dependence of (27.9 ± 0.9) mV/K, a dark count rate of 480 kHz/mm2, a gain of ${3times 10^{6}}$ , and a single photon time resolution of (78 ± 2) ps (FWHM). The process proposed in this letter can be applied to new generation single photon sensors with on-chip integrated intelligent electronics." @default.
• W2963294581 created "2019-07-30" @default.
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• W2963294581 date "2019-09-01" @default.
• W2963294581 modified "2023-10-14" @default.
• W2963294581 title "A Novel High Photon Detection Efficiency Silicon Photomultiplier With Shallow Junction in 0.35 $mu$ m CMOS" @default.
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• W2963294581 doi "https://doi.org/10.1109/led.2019.2929499" @default.
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