FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2963875265> ?p ?o ?g. }

• W2963875265 endingPage "428" @default.
• W2963875265 startingPage "424" @default.
• W2963875265 abstract "Raman spectroscopy and sheet resistance measurements were used to study the preparation processes of low-resistance p-type 4H-SiC by Al ion implantation with ion doses of 2.45×10 1 2 - 9.0×10 1 4 cm -2 and annealing treatment with temperatures of 1700 - 1900 °C. Greatly different from the LOPC (longitudinal optical phonon-plasmon coupled) Raman mode found from the sample of doping 4H-SiC during epitaxial growth, no significant influence on the surface concentration could be found for the longitudinal optical (LO) mode of Al-implanted 4H-SiC samples. When the Al surface concentration is larger than around 10 18 cm -3 , it was found that the intensity of the LO+ Raman peak (~ 980 - 1000 cm -1 ) increases and its full width at half maximum (FWHM) drops with the increase of surface concentration after annealing treatment. Moreover, for surface concentrations above 10 1 8 cm - 3 , the LO+ Raman peak showed a left shift towards the LO peak, which could be related to the increase of free carrier concentration in the Al-implanted 4H-SiC samples. After higher annealing temperatures of 1800 °C and 1900 °C, the crystallinity of Al-implanted 4H-SiC was found to be improved compared to annealing at 1700 °C for surface concentrations larger than 10 18 cm -3 , which is consistent with the results of sheet resistance measurements." @default.
• W2963875265 created "2019-07-30" @default.
• W2963875265 creator A5016936966 @default.
• W2963875265 creator A5024267262 @default.
• W2963875265 creator A5031579366 @default.
• W2963875265 creator A5035958037 @default.
• W2963875265 creator A5043329224 @default.
• W2963875265 creator A5044305349 @default.
• W2963875265 creator A5060699778 @default.
• W2963875265 creator A5061020260 @default.
• W2963875265 creator A5065496572 @default.
• W2963875265 creator A5075795991 @default.
• W2963875265 date "2019-07-01" @default.
• W2963875265 modified "2023-09-27" @default.
• W2963875265 title "Raman Spectroscopy Characterization of Ion Implanted 4H-SiC" @default.
• W2963875265 cites W1982484779 @default.
• W2963875265 cites W1983977531 @default.
• W2963875265 cites W2028621450 @default.
• W2963875265 cites W2030623769 @default.
• W2963875265 cites W2090010208 @default.
• W2963875265 cites W2094956071 @default.
• W2963875265 cites W2153035589 @default.
• W2963875265 cites W2621973240 @default.
• W2963875265 cites W2809989251 @default.
• W2963875265 doi "https://doi.org/10.4028/www.scientific.net/msf.963.424" @default.
• W2963875265 hasPublicationYear "2019" @default.
• W2963875265 type Work @default.
• W2963875265 sameAs 2963875265 @default.
• W2963875265 citedByCount "4" @default.
• W2963875265 countsByYear W29638752652019 @default.
• W2963875265 countsByYear W29638752652020 @default.
• W2963875265 countsByYear W29638752652021 @default.
• W2963875265 countsByYear W29638752652022 @default.
• W2963875265 crossrefType "journal-article" @default.
• W2963875265 hasAuthorship W2963875265A5016936966 @default.
• W2963875265 hasAuthorship W2963875265A5024267262 @default.
• W2963875265 hasAuthorship W2963875265A5031579366 @default.
• W2963875265 hasAuthorship W2963875265A5035958037 @default.
• W2963875265 hasAuthorship W2963875265A5043329224 @default.
• W2963875265 hasAuthorship W2963875265A5044305349 @default.
• W2963875265 hasAuthorship W2963875265A5060699778 @default.
• W2963875265 hasAuthorship W2963875265A5061020260 @default.
• W2963875265 hasAuthorship W2963875265A5065496572 @default.
• W2963875265 hasAuthorship W2963875265A5075795991 @default.
• W2963875265 hasConcept C108649604 @default.
• W2963875265 hasConcept C113196181 @default.
• W2963875265 hasConcept C120665830 @default.
• W2963875265 hasConcept C121332964 @default.
• W2963875265 hasConcept C145148216 @default.
• W2963875265 hasConcept C159985019 @default.
• W2963875265 hasConcept C171250308 @default.
• W2963875265 hasConcept C178790620 @default.
• W2963875265 hasConcept C185592680 @default.
• W2963875265 hasConcept C192562407 @default.
• W2963875265 hasConcept C2777855556 @default.
• W2963875265 hasConcept C2779227376 @default.
• W2963875265 hasConcept C40003534 @default.
• W2963875265 hasConcept C41823505 @default.
• W2963875265 hasConcept C43617362 @default.
• W2963875265 hasConcept C46275449 @default.
• W2963875265 hasConcept C49040817 @default.
• W2963875265 hasConcept C57863236 @default.
• W2963875265 hasConcept C66825105 @default.
• W2963875265 hasConceptScore W2963875265C108649604 @default.
• W2963875265 hasConceptScore W2963875265C113196181 @default.
• W2963875265 hasConceptScore W2963875265C120665830 @default.
• W2963875265 hasConceptScore W2963875265C121332964 @default.
• W2963875265 hasConceptScore W2963875265C145148216 @default.
• W2963875265 hasConceptScore W2963875265C159985019 @default.
• W2963875265 hasConceptScore W2963875265C171250308 @default.
• W2963875265 hasConceptScore W2963875265C178790620 @default.
• W2963875265 hasConceptScore W2963875265C185592680 @default.
• W2963875265 hasConceptScore W2963875265C192562407 @default.
• W2963875265 hasConceptScore W2963875265C2777855556 @default.
• W2963875265 hasConceptScore W2963875265C2779227376 @default.
• W2963875265 hasConceptScore W2963875265C40003534 @default.
• W2963875265 hasConceptScore W2963875265C41823505 @default.
• W2963875265 hasConceptScore W2963875265C43617362 @default.
• W2963875265 hasConceptScore W2963875265C46275449 @default.
• W2963875265 hasConceptScore W2963875265C49040817 @default.
• W2963875265 hasConceptScore W2963875265C57863236 @default.
• W2963875265 hasConceptScore W2963875265C66825105 @default.
• W2963875265 hasLocation W29638752651 @default.
• W2963875265 hasOpenAccess W2963875265 @default.
• W2963875265 hasPrimaryLocation W29638752651 @default.
• W2963875265 hasRelatedWork W1669947527 @default.
• W2963875265 hasRelatedWork W2029628769 @default.
• W2963875265 hasRelatedWork W2068836306 @default.
• W2963875265 hasRelatedWork W2083999561 @default.
• W2963875265 hasRelatedWork W2157508800 @default.
• W2963875265 hasRelatedWork W2226130610 @default.
• W2963875265 hasRelatedWork W2269334047 @default.
• W2963875265 hasRelatedWork W2331310308 @default.
• W2963875265 hasRelatedWork W2963875265 @default.
• W2963875265 hasRelatedWork W3145164367 @default.
• W2963875265 hasVolume "963" @default.
• W2963875265 isParatext "false" @default.
• W2963875265 isRetracted "false" @default.

• next