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- W2964187839 abstract "Abstract We present a compact model of the gate tunneling current in cylindrical surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on quantum mechanical correction. The model is physics-based and is given in an analytical closed form. We start by deriving a quadratic approximation of the quantum electrostatic potential with the two lowest energy levels using quantum perturbation theory. In addition, small-diameter cylindrical SG MOSFETs can be described excellently by taking both structural and electrical confinement effects into account. A self-consistent Schrodinger-Poisson simulation was used as a benchmark to assess the proposed model. It was found that the calculated gate tunneling currents determined using the model matched well with the corresponding currents derived using self-consistent calculations. The model is thus useful for fast analysis of gate tunneling currents within the context of a circuit simulator." @default.
- W2964187839 created "2019-07-30" @default.
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- W2964187839 date "2019-08-01" @default.
- W2964187839 modified "2023-09-24" @default.
- W2964187839 title "A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors" @default.
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- W2964187839 doi "https://doi.org/10.1016/j.mee.2019.111086" @default.
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