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- W2964237245 abstract "Despite their growing adoption in a variety of applications, SiC MOSFETs are generally not available at high current rating. Therefore, there is a high demand for power modules exploiting configurations based on parallel devices. However, these products still need optimization in order to ensure long-term reliability. This paper presents a methodology relying on fast electrothermal simulations aimed at aiding this optimization procedure. The proposed approach is applied to a power module in which the parallel MOSFETs are realistically subject to mismatched parameters." @default.
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- W2964237245 date "2019-07-01" @default.
- W2964237245 modified "2023-09-25" @default.
- W2964237245 title "An Efficient Simulation Methodology to Quantify the Impact of Parameter Fluctuations on the Electrothermal Behavior of Multichip SiC Power Modules" @default.
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- W2964237245 doi "https://doi.org/10.4028/www.scientific.net/msf.963.855" @default.
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